2013. 11. 08 1/5 semiconductor technical data KMB3D5N40SA n-ch trench mosfet revision no : 1 general description this trench mosfet has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for load switch and back-light inverter. features ? v dss =40v, i d =3.5a ? drain-source on resistance r ds(on) =45m ? (max.) @ v gs =10v r ds(on) =62m ? (max.) @ v gs =4.5v ? super high dense cell design maximum rating (ta=25 ? ) dim millimeters sot-23 a bc d e 2.93 0.20 1.30+0.20/-0.150.40+0.15/-0.05 2.40+0.30/-0.20 g1 .90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q note > *surface mounted on 1 ?? 1 fr4 board, t ?a 5sec pin connection (top view) characteristic symbol n-ch unit drain-source voltage v dss 40 v gate-source voltage v gss ?? 20 v drain current dc@ta=25 ? i d 3.5 a dc@ta=70 ? 2.8 pulsed i dp 14 drain-source-diode forward current i s 1.0 a drain power dissipation ta=25 ? p d 1.25 w ta=70 ? 0.8 maximum junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? thermal resistance, junction to ambient r thja 100 ? /w 2 3 1 gs d 1 2 3 ma1 downloaded from: http:///
2013. 11. 08 2/5 KMB3D5N40SA revision no : 1 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i ds =250 a, v gs =0v, 40 - - v drain cut-off current i dss v gs =0v, v ds =32v - - 0.5 a v gs =0v, v ds =32v, tj=55 ? - - 10 gate leakage current i gss v gs = ?? 20v, v ds =0v - - ?? 100 na gate threshold voltage v th v ds =v gs, i d =250 a 1.0 - 3.0 v drain-source on resistance r ds(on) * v gs =10v, i d =3.5a - 36 45 m ? v gs =4.5v, i d =3.0a - 56 62 on-state drain current i d(on) * v gs =10v, v ds ?? 4.5v 6 - - a forward transconductance g fs * v ds =10v, i d =3.5a - 10 - s dynamic input capaclitance c iss v ds =20v, f=1mhz, v gs =0v - 315 - pf ouput capacitance c oss - 69 - reverse transfer capacitance c rss - 39 - total gate charge q g * v ds =20v, v gs =10v, i d =3.5a - 6.4 10 nc gate-source charge q gs * - 0.7 - gate-drain charge q gd * - 2.1 - turn-on delat time t d(on) * v dd =20v, v gs =10v i d =1a, r g =6 ? - 5 10 ns turn-on rise time t r * - 12 20 turn-off deley time t d(off) * - 20 30 turn-off fall time t f * - 15 25 source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i s =1a - 0.8 1.2 v note > *pulse test : pulse width <300 ? , duty cycle < 2% downloaded from: http:///
2013. 11. 08 3/5 KMB3D5N40SA revision no : 1 24681 0 0 40 8 12 16 20 drain - current i d (a) 0 0 4 200100 300 500400 81 2 2 0 16 gate-source volatage v gs (v) 0 01 4 8 2016 12 2345 drain- source on-resistance r ds(on) (m ) 0 60 100 20 40 80 -25 150 50 75 100 125 25 -50 0 v gs =10v i d =3.5a v ds =v gs c t a =25 junction temperature tj ( ) c -50 -25 0 50 100 75 125 150 25 0 1 42 53 junction temperature tj ( ) c v ds =v gs i d =250 a gate threshold voltage v th (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) drain current i d (a) drain source on resistance r ds(on) (m ) fig2. r ds(on) - i d fig3. i d - v gs fig4. r ds(on) - t j fig5. v th - t j v gs =3v -55 c 25 c 125 c source - drain forward voltage v sdf (v) 0.8 1.2 00 . 4 1 . 62 . 0 0 2 10 84 6 fig6. i s -v sdf v gs =4v v gs =10, 9, 8, 7, 6, 5v v gs =4.5v v gs =10v reverse drain current i s (a) downloaded from: http:///
2013. 11. 08 4/5 KMB3D5N40SA revision no : 1 fig10. transient thermal response curve v ds =20v i d =3.5a drain current i d (a) drain - source voltage v ds (v) fig9. safe operation area 0.1 0.01 0.1 1.0 10.0 100.0 11 0 100 1ms 100 s 10ms 10s 100ms 1s dc t 1 t 2 p dm duty cycle d = t 1 /t 2 v gs = 10v single pulset a = 25 c r ds(on) limited square wave pulse duration (sec) 10 100 600 10 -3 10 -2 10 -1 1 10 -4 0.01 0.1 1 2 normalized effective transient thermal resistance total gate - charge q g (nc) fig8. c - v ds drain - source voltage v ds (v) 0 10 62 4 8 2 4 10 8 6 0 fig7. v gs - q g capacitance c (pf) gate - source voltage v gs (v) 0 200 400 600 800 081 62 4 32 40 v gs =0v f = 1mhz c oss c iss c rss 0.02 0.1 0.2 duty cycle = 0.5 0.05 single pluse downloaded from: http:///
2013. 11. 08 5/5 KMB3D5N40SA revision no : 1 fig11. gate charge circuit and wave form v gs 10 v q g q gd q gs q v ds v gs t r t d(on) 10% 90% t on t f t d(off) t off i d i d fig12. resistive load switching v ds v gs v ds v gs 1.0 ma schottkydiode 10 v 6 r l 0.5 v dss 0.5 v dss downloaded from: http:///
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